Направление: «Разработка фундаментальных принципов образования новой фазы в многокомпонентных системах с химическими реакциями и высокосортными плазменными потоками с целью создания управляемого синтеза новых материалов и гетероструктур на основе широкозонных полупроводников и диэлектриков  для микро, нано  - и оптоэлектроники», научн. руководитель - проф., докт. физ.-мат. наук С.А. Кукушкин


Полноформатные статьи, индексируемые в базах Web of Science и/или Scopus, опубликованные в рамках данного направления (с 2011 года):

 

1. S.А. Kukushkin, G.V. Benemanskaya, P.A. Dementev, S.N. Timoshnev, B. Senkovskiy (2016) Synchrotron-radiation photoemission study of the ultrathin Ba/3C-SiC(111) interface. Journal of Physical and Chemistry of Solids 90, 40-44. DOI 10.1016/j.jpcs.2015.10.018 (link) 

2. Kostrin D.K., Lisenkov A.A. (2016) Surface Modification by Vacuum Arc Plasma Source. Materials Science Forum. V. 843. P.278–283. doi:10.4028/www.scientific.net/MSF.843.278 (link)

3. Yu.A. Bystrov, N.Z. Vetrov, A.A. Lisenkov, D.K. Kostrin (2015) Сathode Sports of Vacuum Arc Discharges. Motion Control on the Working Surface. Vakuum in Forschung und Praxis 27(2), 22-25.  DOI: 10.1002/vipr.201500578  (link)

4. M.L. Vinogradov, V.T. Barchenko, A.A. Lisenkov, D.K. Kostrin, N.A. Babinov (2015)  Gas Permeation through Vacuum Materials. Mass-spectrometry Measurement System. Vakuum in Forschung und Praxis 27(3), 26-29.   DOI: 10.1002/vipr.201500584 (link)

5. N.Z. Vetrov, D.K. Kostrin, A.A. Lisenkov, M.S. Popova (2015) Antiemissive coatings. Journal of Physics: Conference Series 652(012032), 1-7.    (link)

6. S. A. Kukushkin, A. V. Osipov (2015) The equilibrium state in the Si-O-C ternary system during SiC growth by chemical substitution of atoms. Technical Physics Letters 41(3), 259-262.  DOI 10.1134/S1063785015030244 (link)

7. A. V. Tumarkin , S. A. Kukushkin, A. V. Osipov, A. S. Ankudinov, A. A. Odinets (2015) Role of elastic energy in the formation of ferroelectric barium strontium titanate films on sapphire. Physics of the Solid State 57(4), 815-819. DOI 10.1134/S1063783415040307   (link)

8. G.V. Benemanskaya, P.A. Dementev, S.А. Kukushkin, M.N. Lapushkin, A.V. Osipov, B. Senkovskiy, S.N. Timoshnev (2015) Photoemission Study of nano SiC Epitaxial layers synthesized by a New method of the Atom Substitution in Si Crystal lattice. Materials Physics and Mechanics 22(2), 183-190.           (link)

9. O.N. Sergeeva, A.A. Bogomolov, A.V. Solnyshkin, N.V. Komarov, S. A. Kukushkin, D.M. Krasovitsky, A.L. Dudin, D.A. Kiselev, S.V. Ksenich, S.V. Senkevich, E.Yu. Kaptelov and I.P. Pronin (2015) SEM, Dielectric, Pyroelectric, and Piezoelectric Response of Thin Epitaxial AlN Films Grown on SiC/Si Substrate. Ferroelectrics 477(1), 121-130. DOI 10.1080/00150193.2015.1000144 (link)

10. A.S. Grashchenko, S.A. Kukushkin, A.V. Osipov. (2015) Microhardness study of two-layer nanostructures by a nanoindentation method. Materials Physics and Mechanics 24(1), 35-40.        (link)

11. S. A. Kukushkin , A. V. Osipov, M. M. Rozhavskaya, A. V. Myasoedov, S. I. Troshkov, V. V. Lundin, L. M. Sorokin, A. F. Tsatsul’nikov (2015) Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN. Physics of the Solid State 57(9), 1899-1907.  DOI 10.1134/S1063783415090218 (link)

12. V. N. Bessolov, A. S. Grashchenko, E. V. Konenkova, A. V. Myasoedov, A. V. Osipov, A. V. Red’kov, S. N. Rodin, V. P. Rubets, S. A. Kukushkin (2015) Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN. Physics of the Solid State 57(10), 1966-1971. DOI 10.1134/S1063783415100042 (link)

13. N. A. Feoktistov, S. A. Grudinkin, V. G. Golubev, M. A. Baranov, K. V. Bogdanov, S. A. Kukushkin (2015) Evolution of the morphology of diamond particles and mechanism of their growth during the synthesis by chemical vapor deposition. Physics of the Solid State 57(11), 2184-2190. DOI 10.1134/S1063783415110104 (link)

14. S. A. Grudinkin, V. G. Golubev, A. V. Osipov, N. A. Feoktistov, S. A. Kukushkin (2015) Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon. Physics of the Solid State 57(12), 2543-2549. DOI 10.1134/S1063783415120136    (link)

15. A. V. Redkov, A. V. Osipov, S. A. Kukushkin (2015) Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions. Physics of the Solid State 57(12), 2524-2531.  DOI 10.1134/S106378341512029X   (link)

16. G.V. Benemanskaya, M.N.Lapushkin, S.N.Timoshnev, A.V.Nelubov (2015) Synchrotron radiation photoemission study of the ultrathin Cs/InN interface. Solid State Communications 217, 34–37. DOI 10.1016/j.ssc.2015.05.008 (link)

17. A.V. Redkov, S.A. Kukushkin, A.V. Osipov (2015) Surface defects formation on strained thin films growing via chemical reaction: a model. Journal of Physics: Conference Series 643(012005). DOI 10.1088/1742-6596/643/1/012005 (link)

18. R. S. Telyatnik, A. V. Osipov, S. A. Kukushkin (2015) Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of dislocations, cracks, and buckles in the epitaxial AlN(0001)/SiC/Si(111) heterostructure. Physics of the Solid State 57(1), 162-172. DOI 10.1134/S106378341501031X    (link)

19. L.M. Sorokin, A.V. Myasoedov, A.E. Kalmykov, D. A. Kirilenko,V. N. Bessolov and S. A. Kukushkin (2015) TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates. Semicond. Sci. Technol. 30, 114002-114008. DOI 10.1088/0268-1242/30/11/114002 (link)

20. Bystrov Yu.A., Vetrov N.Z., Lisenkov A.A. Kostrin D.K. (2015) Сathode Spots of Vacuum Arc Discharges. Motion Control on the Working Surface. Vakuum in Forschung und Praxis. 27(2):22–25. DOI: 10.1002/vipr.201500578 (link)

21. Vinogradov M.L., Barchenko V.T., Lisenkov A.A., Kostrin D.K., Babinov N.A. (2015) Gas Permeation through Vacuum Materials. Mass-spectrometry Measurement System. Vakuum in Forschung und Praxis. 27(3):24–27. DOI: 10.1002/vipr.201500584   (link)

22. Vetrov N.Z., Kostrin D.K., Lisenkov A.A., Popova M.S. (2015) Antiemissive coatings.  Journal of Physics: Conference Series 652:012032.   doi:10.1088/1742-6596/652/1/012032  (link)

23. S.A. Kukushkin, A.V. Lukyanov, A.V. Osipov, N.A. Feoktistov (2014) Epitaxial silicon carbide on a 6″ silicon wafer. Technical Physics Letters 40(1), 36-39. DOI 10.1134/S1063785014010088 (link)

24. S.A. Kukushkin, A.V. Osipov (2014) First-order phase transition through an intermediate state. Physics of the Solid State 56(4), 792-800. DOI 10.1134/S1063783414040143 (link)

25. S.A. Kukushkin, A.V. Osipov. (2014) A new method of replacement atoms for the synthesis of epitaxial layers of SiC on Si: From theory to practice // Journal of Physics: Conference Series 541(012003), 1-9.                (link)

26. V. N. Bessolov, E. V. Konenkova, S. A. Kukushkin, A. V. Myasoedov, A. V. Osipov, S. N. Rodin, M. P. Shcheglov, N. A. Feoktistov (2014) Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer. Technical Physics Letters 40(5), 386-388. DOI 10.1134/S1063785014050046       (link)

27. V.N. Bessolov, E.V. Konenkova, S.A. Kukushkin, A.V. Myasoedov, S.N. Rodin, A.V. Osipov, M.P. Shcheglov (2014) Semipolar GaN on Si (001): The role of SiC buffer layer synthesized by method of substrate atom substitution. Materials Physics and Mechanics 21(1), 71-77.    (link)

28. S. A. Kukushkin, A. V. Osipov, A. V. Redkov (2014) Morphological stability criterion for a spherical crystallization front in a multicomponent system with chemical reactions. Physics of the Solid State 56(12), 2530-2536.  DOI 10.1134/S106378341412018X  (link)

29. A. S. Grashchenko, S. A. Kukushkin , A. V. Osipov (2014) Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate. Technical Physics Letters 40(12), 1114-1116.  DOI 10.1134/S1063785014120268   (link)

30. Yu.A. Bystrov, N.Z . Vetrov, A.A. Lisenkov (2014) Peculiarities of the Formation of Intermetallic Coatings Based on Platinum and Zirconium. Technical Physics Letters 40(12), 1126–1129.   DOI 10.1134/S1063785014120207         (link)

31. Yu.A. Bystrov, N.Z. Vetrov, A.A. Lisenkov, D.K. Kostrin (2014) Technological Capabilities of Vacuum Arc Plasma Sources. Vakuum in Forschung und Praxis 26(5), 19-23.       DOI: 10.1002/vipr.201400563           (link)

32. V.T. Barchenko, A.A. Lisenkov, M.L. Vinogradov (2014) Apparatus and method for determining the gas permeability and flux of Helium throung the materials and coatings. Journal of Physics: Conference Series 567(012002), 1-7.    (link)

33. V.T. Barchenko, A.A. Lisenkov, N.A. Babinov (2014) Module for dielectrics surface modification by fast neutral particles beams. Journal of Physics: Conference Series 567(012029), 1-4.   (link)

34. V.T. Barchenko, S.A. Trifonov, A.A. Lisenkov (2014) Modernization of ion plasma modules for application of nanostructured carbon coatings. Russian Physics Journal. 57(11/3), 5-7.  (link)

35. S.A. Kukushkin, A.V. Osipov, N.A. Feoktistov (2014) Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review. Physics of the Solid State 56 (8), 1507-1535. DOI 10.1134/S1063783414080137 (link)

36. S.A. Kukushkin and A.V. Osipov (2014) Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films. J. of Phys. D: Appl. Phys. 47, 313001-313041. DOI 10.1088/0022-3727/47/31/313001  (link)

37. V.N. Bessolov E.V. Konenkova, S.A. Kukushkin, A.V. Osipov S.N. Rodin (2014) Semipolar gallium nitride on silicon: technology and properties. Rev. Adv. Mater. Sci. 38, 75-93. (link)

38. Bystrov Yu.A., Vetrov N.Z., Lisenkov A.A. (2014) Peculiarities of the Formation of Intermetallic Coatings Based on Platinum and Zirconium. Technical Physics Letters. 40(12):1126–1129.   DOI:10.1134/S1063785014120207 (link)

39. Bystrov Yu.A., Vetrov N.Z., Lisenkov A.A. Kostrin D.K. (2014) Technological Capabilities of Vacuum Arc Plasma Sources. Vakuum in Forschung und Praxis 26(5):19–23.  DOI: 10.1002/vipr.201400563   (link)

40. Barchenko V.T., Lisenkov A.A., Vinogradov M.L. (2014) Apparatus and method for determining the gas permeability and flux of Helium throung the materials and coatings.  LTD Coating 2014. Journal of Physics: Conference Series 567:012002. 7 pages  doi:10.1088/1742-6596/567/1/012002 (link)

41. Barchenko V.T., Lisenkov A.A., Babinov N.A. (2014) Module for dielectrics surface modification by fast neutral particles beams. LTD Coating 2014. Journal of Physics: Conference Series 567:012029  doi:10.1088/1742-6596/567/1/012029 (link)

42. S.A. Kukushkin, A.V. Osipov  (2013) A new mechanism of elastic energy relaxation in heteroepitaxy of monocrystalline films: Interaction of point defects and dilatation dipoles. Mechanics of Solids 48(2):216-227 (link)

43. V.N. Bessolov, E.V. Konenkova, S.A. Kukushkin, V.I. Nikolaev, A.V. Osipov, Sh. Sharofidinov, M.P. Shcheglov (2013) Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate. Technical Physics Letters 39(3), 274-276. DOI 10.1134/S106378501303019X (link)

44. S.A. Kukushkin, A.V. Osipov, D.B. Vcherashnii, S.A. Obukhov, N.A. Feoktistov (2013) Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique. Technical Physics Letters 39(5), 488-491. DOI 10.1134/S1063785013050234 (link)

45. V. Bessolov, E. Konenkova, M. Shcheglov, S. Sharofidinov, S.  Kukushkin, A. Osipov, V. Nikolaev (2013) HVPE growth of GaN in the semipolar direction on planar Si(210). Physica status solidi C 10(3), 433–436. DOI 10.1002/pssc.201200566 (link)

46. S.A. Kukushkin, A. V. Osipov (2013) A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles. J. Appl. Phys 113, 024909. DOI 10.1063/1.4773343 (link)

47. S.A. Kukushkin, A.V. Osipov (2013) Anisotropy of the solid-state epitaxy of silicon carbide in silicon. Semiconductors 47(12), 1551-1555. DOI 10.1134/S1063782613120129 (link)

48. V.V. Ratnikov, A.E. Kalmykov, A.V. Myasoedov, S.A. Kukushkin, A.V. Osipov, L.M. Sorokin (2013) Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage. Technical Physics Letters 39(11), 994-997. DOI 10.1134/S1063785013110230 (link)

49. S.V. Kuz'michev, S.A. Kukushkin, A.V. Osipov (2013) Elastic interaction of point defects in crystals with cubic symmetry. Mechanics of Solids 48(4):431-438. (link)

50. Bystrov Yu.A., Vetrov N.Z., Lisenkov A.A. (2013) A vacuum arc plasma source with extemded design. Vakuum in Forschung und Praxis. Vol.25 Iss.4 Р.45–48. DOI:10.1002/vipr.201300530. (link)

51. Bystrov Yu.A., Vetrov N.Z., Lisenkov A.A. (2013) Special Aspects of Structure Formation of a Multicomponent Layer from Arc-Vacuum Plasma. Technical Physics Letters. 2013; Vol.39, №10. Р.914–916. DOI:10.1134/S1063785013100155. (link)

52. L. M Sorokin, A. E. Kalmykov, A. V. Myasoedov, V. N. Bessolov, A. V. Osipov and S. A. Kukushkin (2013) Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure. Journal of Physics: Conference Series 471(012033). DOI 10.1088/1742-6596/471/1/012033 (link)

53. S.A. Kukushkin and A. V. Osipov (2012) Theory of Phase Transformations in the Mechanics of Solids and Its Applications for Description of Fracture, Formation of Nanostructures and Thin Semiconductor Films Growth. Key Engineering Materials 528, 145-164. DOI 10.4028/www.scientific.net/KEM.528.145 (link)

54. S.A. Kukushkin, A.V. Osipov, S.G. Zhukov, E.E. Zavarin, W.V. Lundin, M.A. Sinitsyn, M.M. Rozhavskaya, A.F. Tsatsulnikov, S.I. Troshkov, N.A. Feoktistov (2012) Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide. Technical Physics Letters 38(3), 297-299. DOI 10.1134/S1063785012030261 (link)

55. S.A. Kukushkin, I.Yu. Tentilova, I.P. Pronin (2012) Mechanism of the phase transformation of the pyrochlore phase into the perovskite phase in lead zirconate titanate films on silicon substrates. Physics of the Solid State 54(3), 611-616. DOI 10.1134/S1063783412030158 (link)

56. S.A. Kukushkin, A.V. Osipov (2012) Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble.  Doklady Physics 57(5):217-220.  (link)

57. A.V. Osipov, S.A. Kukushkin, N.A. Feoktistov, E.V. Osipova, N. Venugopalb, G.D. Vermab, Bipin Kumar Guptac, Anirban Mitra (2012) Structural and optical properties of high quality ZnO thin film on Si with SiC buffer layer. Thin Solid Films 520(23), 6836–6840. DOI 10.1016/j.tsf.2012.07.094 (link)

58. Bystrov Yu.A., Vetrov N.Z., Lisenkov A.A. (2012) Plasmachemical Synthesis of Aluminum Based Nitride Compounds in Vacuum Arc Discharge Plasma. Technical Physics Letters. Vol.38. №10. Р.938–940. DOI:10.1134/S1063785012100173. (link)

59. Bystrov Yu.A., Vetrov N.Z., Lisenkov A.A. (2011) Plasmachemical Synthesis of Titanium Carbide on Copper Substrates. Technical Physics Letters. Vol. 37. № 8. Р. 707–709. DOI:10.1134/S1063785011080050. (link)

60. Lisenkov A.A., Valuev V.P. (2011) Vacuum Arc Discharge on Integrally Cold Cathode. Vakuum in Forschung und Praxis. V.23. Iss.6. Р.32–36.  DOI:10.1002/vipr.201100474. (link)

61. L.M. Sorokin, A.E. Kalmykov, V.N. Bessolov, N.A. Feoktistov, A.V. Osipov, S.A. Kukushkin, N.V. Veselov (2011) Structural characterization of GaN epilayers on silicon: Effect of buffer layers. Technical Physics Letters 37 (4), 326-329. DOI 10.1134/S1063785011040158 (link)

62. S.A. Kukushkin, A.V. Osipov, E.V. Osipova, S.V. Razumov, A.V. Kandakov (2011) The optical constants of zinc oxide epitaxial films grown on silicon with a buffer nanolayer of silicon carbide Journal of Optical Technology 78(7), 440-443. doi: 10.1364/JOT.78.000440 (link)

63. V.N. Bessolov, S.A. Kukushkin, L.I. Mets, Yu.V. Zhilyaev, E.V. Konenkova, A.V. Osipov, L.M. Sorokin, N.A. Feoktistov, Sh. Sharofidinov, M.P. Shcheglov (2011) Aluminum and gallium nitrides on a silicon substrate with an intermediate silicon carbide nanolayer for ultraviolet devices. Journal of Optical Technology 78(7) 435-439 doi: 10.1364/JOT.78.000435  (link)

64. I.Yu. Tentilova, S.A. Kukushkin, E.Yu. Kaptelov, I.P. Pronin, V.L. Ugolkov (2011) Peculiarities of crystallization of thin ferroelectric films of lead zirconate titanate. Technical Physics Letters 37(2), 163-165. DOI 10.1134/S1063785011020295 (link)

65. L.M. Sorokin, A.E. Kalmykov, A.V. Myasoedov, N.V. Veselov, V.N. Bessolov, N.A. Feoktistov, A.V. Osipov and S.A. Kukushkin (2011) Structural characterization of GaN/AIN layers on 3C-SiC/Si(111) by TEM. Journal of Physics: Conference Series 326, 012015. DOI 10.1088/1742-6596/326/1/012015 (link)

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